Characteristics of Ni-based ohmic contacts on n-type 4H-SiC using different annealing methods

Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC

This work reports a nanoscale electro-structural characterisation of Ti/Al ohmic contacts formed on p-type Al-implanted silicon carbide (4H-SiC). The morphological and the electrical properties of the Al-implanted layer, annealed at 1700°C with or without a protective capping layer, and of the ohmic contacts were studied using atomic force microscopy [AFM], transmission line model measurements ...

Improved Schottky Contacts on n-Type 4H-SiC Using ZrB2 Deposited at High Temperatures

1.—Department of Physics and Astronomy, Youngstown State University, Youngstown, OH 44555, USA. 2.—Department of Physics, Georgia Southern University, Statesboro, GA 30460, USA. 3.—Department of Physics, Auburn University, Auburn, AL 36849, USA. 4.—Present address: Department of Materials Science and Engineering, University of Illinois at Urbana– Champaign, Urbana, IL 61801, USA. 5.—e-mail: tno...

Single-step synthesis process of Ti3SiC2 ohmic contacts on 4H-SiC by sputter-deposition of Ti

Annealing of multivacancy defects in 4H-SiC

The annealing behavior of defects observed in electron paramagnetic resonance EPR and photoluminescence PL is discussed. We consider the divacancy the P6/P7 EPR centers and a previously unreported EPR center that we suggest is a VC-VSi-VC trivacancy and their relationship with each other and with the UD1–3 series of PL lines near 1 eV. We observe that the divacancy and the UD2 PL lines annealin...

Characterization of Pd/Ni/Au ohmic contacts on p-GaN

A low-resistance ohmic contact to Mg-doped p-type GaN grown by metal-organic chemical vapor deposition (MOCVD) with a carrier concentration of 2 · 10 cm 3 using Pd/Ni/Au metallization was formed. An anneal at 500 C for 1 min in a flowing N2 ambient produced an excellent ohmic contact with a specific contact resistivity as low as 2.4 · 10 5 X cm. X-ray photoelectron spectroscopy (XPS) and Auger ...